Toyota Tsusho patented a device for manufacturing SiC substrates, aiming to reduce or remove work-affected layers. The method involves etching SiC substrates inside a main container with a temperature gradient, under vapor pressure of gaseous species containing Si element. GlobalData’s report on Toyota Tsusho gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Toyota Tsusho, Finite element simulation was a key innovation area identified from patents. Toyota Tsusho's grant share as of March 2024 was 30%. Grant share is based on the ratio of number of grants to total number of patents.
Method for manufacturing sic substrate using etching process
The granted patent (Publication Number: US11972949B2) discloses a method for manufacturing a SiC substrate involving an etching process conducted within a SiC main container. The process includes heating the container to create a temperature gradient under the vapor pressure of gaseous species containing Si element. Additionally, the method incorporates a Si atom sublimation process to thermally sublimate Si atoms from the surface of the SiC substrate, contributing to the manufacturing process.
Furthermore, the patent details a method for reducing the work-affected layer of a SiC substrate through an etching process within a SiC main container. This process involves heating the etching space inside the container, positioning the SiC substrate on the high-temperature side of the temperature gradient. The etching is performed by arranging the substrate in a space where air is exhausted under the vapor pressure of a gaseous species containing Si element. The method aims to enhance the manufacturing of SiC substrates by optimizing the etching process and reducing the work-affected layer, ultimately improving the quality and efficiency of SiC substrate production.
To know more about GlobalData’s detailed insights on Toyota Tsusho, buy the report here.
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