Anglo American has been granted a patent for a method of manufacturing synthetic diamond material via chemical vapor deposition. The process involves growing crack-free synthetic single crystal diamond on a substrate, achieving a thickness of at least 0.5 mm and lateral dimensions of at least 4 mm by 4 mm. GlobalData’s report on Anglo American gives a 360-degree view of the company including its patenting strategy. Buy the report here.

According to GlobalData’s company profile on Anglo American, Wireless charging system was a key innovation area identified from patents. Anglo American's grant share as of July 2024 was 50%. Grant share is based on the ratio of number of grants to total number of patents.

Method for manufacturing synthetic diamond using chemical vapor deposition

Source: United States Patent and Trademark Office (USPTO). Credit: Anglo American Plc

The patent US12065756B2 outlines a method for manufacturing synthetic single crystal diamond material through a chemical vapor deposition (CVD) process. The method begins with the placement of a non-diamond substrate, such as iridium, sapphire, silicon, or silicon carbide, within a CVD reactor. Process gases are introduced to facilitate the growth of a synthetic single crystal diamond substrate wafer on the non-diamond surface. Following this, the diamond wafer is transferred to a second CVD reactor where additional process gases, including carbon, are fed in to grow synthetic diamond material. The resulting diamond material must achieve a minimum thickness of 0.5 mm and a lateral dimension of at least 4 mm, ensuring that it is free of cracks.

Further claims detail specific parameters for the process, including the allowable surface dislocation density of the diamond substrate wafer, which can range from 1×10^6 cm-2 to 1×10^7 cm-2. The growth temperature is adjustable, with options starting from 900°C up to 1050°C. The process gases are specified to include hydrogen with a maximum of 5% oxygen. Additionally, the method allows for the removal of the non-diamond substrate before the diamond wafer is placed in the second reactor. The orientation of the grown synthetic diamond material is aimed to be substantially {100} relative to the substrate, and the CVD reactor operates at a power density between 150 to 600 Wcm-2. The area of the synthetic diamond material produced can vary from 16 mm² to 18,000 mm², providing flexibility in the manufacturing process.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.