Dowa has been granted a patent for a semiconductor light-emitting device with a conductive support substrate, reflective metal layer, and InGaAsP-based semiconductor laminate emitting light with a wavelength of 1000 to 2200 nm. The device features specific layer compositions and thickness for optimal performance. GlobalData’s report on Dowa gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Dowa, 3D memory devices was a key innovation area identified from patents. Dowa's grant share as of May 2024 was 44%. Grant share is based on the ratio of number of grants to total number of patents.

Semiconductor light-emitting device with specific layers and wavelength range

Source: United States Patent and Trademark Office (USPTO). Credit: Dowa Holdings Co Ltd

A recently granted patent (Publication Number: US11996496B2) discloses a semiconductor light-emitting device designed with specific features to optimize its performance. The device includes a conductive support substrate, a reflective metal layer, and a semiconductor laminate consisting of InGaAsP-based III-V group compound semiconductor layers. This semiconductor laminate comprises a p-type cladding layer, an active layer with a MQW structure, and an n-type cladding layer, with an n-type InGaAs contact layer and an n-side electrode. The emitted light from the device falls within a specific wavelength range of 1000 to 2200 nm, with the total thickness of the semiconductor laminate ranging from 2 µm to 8 µm. Additionally, the n-type InGaAs contact layer must have an In composition ratio between 0.532 and 0.60 for optimal performance.

Furthermore, the patent includes additional claims specifying the composition ratio of the n-type InGaAs contact layer, which must fall between 0.54 and 0.60. The n-side electrode is also required to contain specific materials such as Au, Ge, Ti, Pt, and Au. These features are crucial for ensuring the efficient operation and emission of light from the semiconductor light-emitting device. By outlining these specific parameters and configurations, the patent aims to protect the innovative design and functionality of this semiconductor device, which could have significant implications for the field of semiconductor technology and optoelectronics.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.